Samsung Electronics unveils 10nm-class embedded memory card (2)

The new memory solution has a random write speed of 2,000 IOPS (input/output per second) and a random read speed of 5,000 IOPS. Sequential read and write speeds are 260 megabytes per second (MB/ s) and 50MB/s each, up to 10 times faster than a class 10 external memory card.

"The new high-speed, small form factor eMMC reinforces Samsung 's technology leadership in storage memory solutions," said Kim Myungho, vice president of Samsung's memory marketing division.

We recommend:
A Decade of Fastest Development	Eastern Boom Lightens Western Gloom	Chinese firms 'potential Trojan horses'? slows
AVIC unveils new aircraft engines	Oct. data released, inflation slows	13th Int'l Automobile Industry Exhibition
China Int'l Industry Fair opens in Shanghai	Caofeidian coal wharf put into use	Galaxy Soho building in Beijing